Transistors RF MOSFET Power RF LDMOS 65V 100A
BLF369,112: Transistors RF MOSFET Power RF LDMOS 65V 100A
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Configuration : | Dual Dual Source | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | 13 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT502B |
Packaging : | Tube |