BH62UV8000

Features:

*Wide V_CC low operation voltage : 1.65V ~ 3.6V
*Ultra low power consumption :
V_CC = 3.0V Operation current : 5.0mA at 70ns at 25
1.5mA at 1MHz at 25
Standby current : 2.5uA at 25
V_CC = 2.0V Data retention current : 2.5uA at 25
*High speed access time : -70 70ns at 1.8V at 85
*Automatic power down when chip is deselected
*Easy expansion with CE1, CE2 and OE options
*Three state outputs and TTL compatible
*Fully static operation, no clock, no refreash
*Data retention supply voltage as low as 1.0V


Specifications

Symbol	Parameter	Ratings	Unit
VTERM	Terminal Voltage with Respect to GND	-0.5(2)   to 4.6V	V
TBIAS	Temperature Under Bias	-40 to +125	°C
TSTG	Storage Temperature	-60 to +150	°C
PT	Power Dissipation	1.0	w
IOUT	DC Output Current	20	mA

Description

The BH62UV8000 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at O O 1MHz at 3.6V/25 and maximum access time of 70ns at 1.8V/85. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2) and active LOW output enable (OE) and three-state output drivers.

The BH62UV8000 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.

The BH62UV8000 is available in DICE form and 48-ball BGA package.