BH62UV1600

Features:

*Wide VCC low operation voltage : 1.65V ~ 3.6V
*Ultra low power consumption :
   VCC = 3.0V  Operation current : 5.0mA at 70ns at 25
                                                     1.5mA at 1MHz at 25
                      Standby current : 3uA at 25
  VCC = 2.0V  Data retention current : 3uA at 25
*High speed access time :
         -70  70ns at 1.8V at 85
*Automatic power down when chip is deselected
*Easy expansion with CE1, CE2 and OE options
*Three state outputs and TTL compatible
*Fully static operation, no clock, no refreash
*Data retention supply voltage as low as 1.0V


Specifications

Symbol	Parameter	Ratings	Unit
VTERM	Terminal Voltage with Respect to GND	-0.5(2)   to 4.6V	V
TBIAS	Temperature Under Bias	-40 to +125	°C
TSTG	Storage Temperature	-60 to +150	°C
PT	Power Dissipation	1.0	w
IOUT	DC Output Current	20	mA

Description

The BH62UV1600 is a high performance, ultra low power CMOS Static Random Access Memory organized as 2,048K by 8 bits and operates in  a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical operating current of 1.5mA at 1MHz at 3.6V/25 and maximum access time of 70ns at 1.8V/85 . Easy memory expansion is provided by an active LOW chip enable  (CE1),  an  active  HIGH  chip  enable  (CE2)  and  active  LOW  output enable (OE) and three-state output drivers.
The BH62UV1600 has an automatic power down feature, reducing the power consumption significantly when chip is deselected.
The BH62UV1600 is made with two chips of 8Mbit SRAM by stacked multi-chip-package.
The BH62UV1600 is available 48-ball BGA package.