Position: Home  > All Categories> Integrated Circuits (ICs) > BFY450

BFY450

Features: • HiRel Discrete and Microwave Semiconductor• For Medium Power Amplifiers• Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz• Hermetically sealed microwave package• Transition Frequency fT = 20 GHz• SIEGET 25-Line Infineo...

product image

BFY450 Picture
See larger image
SeekIC No. : 004299999 Detail

BFY450: Features: • HiRel Discrete and Microwave Semiconductor• For Medium Power Amplifiers• Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz• Hermeti...

BFY450 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BFY450
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/7/15

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

•  HiRel Discrete and Microwave Semiconductor
•  For Medium Power Amplifiers
•  Compression Point P-1dB =19dBm 1.8 GHz
    Max. Available Gain Gma = 16dB at 1.8 GHz
•  Hermetically sealed microwave package
•  Transition Frequency fT = 20 GHz
•  SIEGET 25-Line
    Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
•   Space Qualified
     ESA/SCC Detail Spec. No.: 5611/008
     Type Variant No. 03


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 4.5 V
Emitter-Base Voltage VEBO 1.5 V
Base current IB 10 mA
Collector current IC 100 mA
Total power dissipation
TS 110°C1), 2)		 Ptot 450 mW
Junction temperature Tj 175
Ambient temperature TA -65 ... +175
Storage temperature Tstg -65 ... +175
Thermal Resistance
Junction - soldering point2) RthJS < 145 K/W

Notes.:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Line Protection, Backups
BX0023
A20B-1008-0550
Tools
TCP202
G084SN05 V.3
Optoelectronics
SFH7770
TLP423J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Resistors
A101G
3006P-1-205LF
View more