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BFY450

Features: • HiRel Discrete and Microwave Semiconductor• For Medium Power Amplifiers• Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz• Hermetically sealed microwave package• Transition Frequency fT = 20 GHz• SIEGET 25-Line Infineo...

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BFY450: Features: • HiRel Discrete and Microwave Semiconductor• For Medium Power Amplifiers• Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz• Hermeti...

BFY450 Data Sheet

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Part Number:
BFY450
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  HiRel Discrete and Microwave Semiconductor
•  For Medium Power Amplifiers
•  Compression Point P-1dB =19dBm 1.8 GHz
    Max. Available Gain Gma = 16dB at 1.8 GHz
•  Hermetically sealed microwave package
•  Transition Frequency fT = 20 GHz
•  SIEGET 25-Line
    Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
•   Space Qualified
     ESA/SCC Detail Spec. No.: 5611/008
     Type Variant No. 03


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 4.5 V
Emitter-Base Voltage VEBO 1.5 V
Base current IB 10 mA
Collector current IC 100 mA
Total power dissipation
TS 110°C1), 2)		 Ptot 450 mW
Junction temperature Tj 175
Ambient temperature TA -65 ... +175
Storage temperature Tstg -65 ... +175
Thermal Resistance
Junction - soldering point2) RthJS < 145 K/W

Notes.:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.




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