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BFY420

Features: • HiRel Discrete and Microwave Semiconductor• For High Gain Low Noise Amplifiers• For Oscillators up to 10 GHz• Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz• Hermetically sealed microwave package• Transition Frequency fT = 22 GH...

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BFY420: Features: • HiRel Discrete and Microwave Semiconductor• For High Gain Low Noise Amplifiers• For Oscillators up to 10 GHz• Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms =...

BFY420 Data Sheet

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Part Number:
BFY420
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  HiRel Discrete and Microwave Semiconductor
•  For High Gain Low Noise Amplifiers
•  For Oscillators up to 10 GHz
•  Noise Figure F = 1.1 dB at 1.8 GHz
    Outstanding Gms = 21dB at 1.8 GHz
•  Hermetically sealed microwave package
•  Transition Frequency fT = 22 GHz
•  SIEGET 25-Line
    Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line


Specifications

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 4.5 V
Emitter-Base Voltage VEBO 15 V
Base current IB 3.0 mA
Collector current IC 35 mA
Total power dissipation
TS 129°C 1), 2)		 Ptot 160 mW
Junction temperature Tj 175
Ambient temperature TA -65 ... +175
Storage temperature Tstg -65 ... +175
Thermal Resistance
Junction - soldering point2) RthJS < 285 K/W

Notes.:
1) At TS = + 129 °C. For TS > + 129 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.




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