Features: • HiRel Discrete and Microwave Semiconductor• For Low Current Applications• For Oscillators up to 12 GHz• Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz• Hermetically sealed microwave package• Transition Frequency fT = 20 GHzR...
BFY405: Features: • HiRel Discrete and Microwave Semiconductor• For Low Current Applications• For Oscillators up to 12 GHz• Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | SYMBOL | VALUE | UNIT |
Collector-Base Voltage | VCBO | 15 | V |
Collector-Emitter Voltage | VCEO | 4.5 | V |
Emitter-Base Voltage | VEBO | 1.5 | V |
Base current | IB | 1.0 | mA |
Collector current | IC | 12 | mA |
Total power dissipation TS 145°C 1), 2) |
Ptot | 55 | mW |
Junction temperature | Tj | 175 | |
Ambient temperature | TA | -65 ... +175 | |
Storage temperature | Tstg | -65 ... +175 | |
Thermal Resistance | |||
Junction - soldering point2) | RthJS | < 545 | K/W |
Notes.:
1) At TS = + 145 °C. For TS > + 145 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.