Features: ·For low-noise, high-gain amplifiers up to 2 GHz.·Linear broadband applications at collector currents up to 40 mA.·Hermetically sealed ceramic package.·fT = 8 GHz F = 1.1 dB at 800 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V...
BFQ 82: Features: ·For low-noise, high-gain amplifiers up to 2 GHz.·Linear broadband applications at collector currents up to 40 mA.·Hermetically sealed ceramic package.·fT = 8 GHz F = 1.1 dB at 800 MHzSpec...
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Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-emitter voltage, VBE = 0 |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
80 |
mA |
Peak collector current, f 10 MHz |
ICM |
80 | |
Base current |
IB |
10 | |
Peak base current, f 10 MHz |
IBM |
10 | |
Total power dissipationTS 95°C3) |
Ptot |
500 |
mW |
Junction temperature |
Tj |
175 |
°C |
Ambient temperature |
TA |
65 . + 175 | |
Storage temperature |
Tstg |
65 . + 175 | |
Thermal Resistance | |||
Junction - ambient2) |
RthJA |
240 |
K/W |
Junction - soldering point3) |
RthJS |
160 |
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm * 16.7 mm * 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.