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BFQ 82

Features: ·For low-noise, high-gain amplifiers up to 2 GHz.·Linear broadband applications at collector currents up to 40 mA.·Hermetically sealed ceramic package.·fT = 8 GHz F = 1.1 dB at 800 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V...

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BFQ 82: Features: ·For low-noise, high-gain amplifiers up to 2 GHz.·Linear broadband applications at collector currents up to 40 mA.·Hermetically sealed ceramic package.·fT = 8 GHz F = 1.1 dB at 800 MHzSpec...

BFQ 82 Data Sheet

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Part Number:
BFQ 82
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5000

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Product Details

Description



Features:

·For low-noise, high-gain amplifiers up to 2 GHz.
·Linear broadband applications at collector currents up to 40 mA.
·Hermetically sealed ceramic package.
·fT = 8 GHz
   F = 1.1 dB at 800 MHz


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage, VBE = 0
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
mA
Peak collector current, f 10 MHz
ICM
80
Base current
IB
10
Peak base current, f 10 MHz
IBM
10
Total power dissipationTS 95°C3)
Ptot
500
mW
Junction temperature
Tj
175
°C
Ambient temperature
TA
65 . + 175
Storage temperature
Tstg
65 . + 175
Thermal Resistance
Junction - ambient2)
RthJA
240
K/W
Junction - soldering point3)
RthJS
160


1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm * 16.7 mm * 0.7 mm.
3) TS is measured on the collector lead at the soldering point to the pcb.




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