Features: • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.Specifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 16 V Collector-emitter...
BFQ 81: Features: • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.Specifications Param...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $.12 - .14 / Piece
Transistors Switching (Resistor Biased) NPN Silicon RF TRANSISTOR
• For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
16 |
V |
Collector-emitter voltage |
VCES |
25 | |
Collector-base voltage |
VCBO |
25 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
30 |
mA |
Base current |
IB |
4 | |
Total power dissipation TS 95°C |
Ptot |
280 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point1) |
RthJS |
325 |
K/W |
1) TS is measured on the collector lead at the soldering point to the pcb.