Features: · High breakdown voltages· Low output capacitance· High gain bandwidth· Good thermal stability· Gold metallization ensures excellent reliability· Surface mounting.Application· Buffer/driver in high-resolution colour graphics monitors.PinoutSpecifications SYMBOL PARAMETER CONDITI...
BFQ256: Features: · High breakdown voltages· Low output capacitance· High gain bandwidth· Good thermal stability· Gold metallization ensures excellent reliability· Surface mounting.Application· Buffer/drive...
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SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO | collector-base voltage BFQ256 BFQ256A |
open emitter |
- |
-100 -115 |
V |
VCEO | collector-emitter voltage BFQ256 BFQ256A |
open base |
- |
-65 -95 |
V |
VCER | emitter-base voltage BFQ256 BFQ256A |
RBE = 100 |
- |
-95 -110 |
V |
VEBO | emitter-base voltage |
open collector |
- |
-3 |
V |
IC | collector current (DC) |
- |
-300 |
mA | |
Ptot | total power dissipation |
TS 115 °C; note 1; see Fig.3 |
- |
2 |
W |
Tstg | storage temperature |
-65 |
+150 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
Note
1. Ts is the temperature at the soldering point of the collector lead.