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BFQ221

Application· Primarily intended for buffer stages in high resolution colour monitors.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 100 V VEBR emitter-base voltage RBE = 100 - 95 V VEBO emit...

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SeekIC No. : 004299818 Detail

BFQ221: Application· Primarily intended for buffer stages in high resolution colour monitors.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage op...

BFQ221 Data Sheet

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Part Number:
BFQ221
Supply Ability:
5000

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Product Details

Description



Application

· Primarily intended for buffer stages in high resolution colour monitors.


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter

-
100
V
VEBR emitter-base voltage
RBE = 100
-
95
V
VEBO emitter-base voltage
open collector
-
3
V
IC collector current (DC)
see Fig.2
-
100
mA
IC(AV) average collector current
see Fig.2
-
100
mA
Ptot total power dissipation

up to Ts = 60 °C; note 1; see Fig.3
-
1.15
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN silicon transistor BFQ221 encapsulated in a 3-lead plastic SOT54 package.


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