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BFQ231

Features: · High breakdown voltages· Low output capacitance· High gain bandwidth· Good thermal stability· Gold metallization ensures excellent reliability.Application· Buffer/driver in high-resolutioncolour graphics monitors.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UN...

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SeekIC No. : 004299822 Detail

BFQ231: Features: · High breakdown voltages· Low output capacitance· High gain bandwidth· Good thermal stability· Gold metallization ensures excellent reliability.Application· Buffer/driver in high-resoluti...

BFQ231 Data Sheet

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Part Number:
BFQ231
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High breakdown voltages
· Low output capacitance
· High gain bandwidth
· Good thermal stability
· Gold metallization ensures excellent reliability.


Application

· Buffer/driver in high-resolutioncolour graphics monitors.


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
BFQ231
BFQ231A
open emitter

-
-


100
115

V
V
VCEO collector-emitter voltage
BFQ231
BFQ231A
open base

-
-

65
95

V
V
VCER collector-emitter voltage
BFQ231
BFQ231A
RBE = 100

-
-

95
110

V
V
VEBO emitter-base voltage
open collector
-
3
V
IC collector current (DC)
see Fig.2
-
300
mA
Ptot total power dissipation

Ts 65 °C;notes 1 and 2; see Fig.3
-
1
W
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Notes
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.




Description

NPN video transistor BFQ231 in a SOT54 (TO-92) plastic package.
PNP complements: BFQ251 and BFQ251A.


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