BFP650 E6327

BFR650 E6327 is a type of NPN silicon Germanium RF transistor which has five unique features: (1)for high power amplifiers;(2)70 GHz fT- Silicon Germanium technology;(3)it is ideal for low phase noise oscilators;(4)Maxim. available Gain Gma is 21 dB at 1.8 GHz and noise figure F is 0.9 dB at 1.8 GHz;(5)gold metallization for high reliability;
 
There are some maximum ratings of BFP650 E6327 about it.Collector-emitter voltage(VCEO) is 4 V.Collector-emitter voltage(VCES) is 13 V.Collector-base voltage(VCBO) is 13 V.Emitter-base voltage(VEBO) is 1.2 V.Collector current(IC) is 150 mA.Base current(IB) is 10 mA.Total power dissipation(Ptot,TS is not higher than 75°C) is 500 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.

Besides,there are some electrical characteristics of BFP650 E6327 at TA = 25°C, unless otherwise specified.Collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 4 V min and 4.5 V typ.Collector-base cutoff current(ICBO,VEB = 0.5 V, Ic = 0) is 100 nA max.Emitter-base cutoff current(IEBO,VEB = 0.5 V, IC = 0) is 10 A max.DC current gain(hFE,Ic is 40 mA , Vce is 3 V) is 100 min,180 typ and 250 max.