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BFP620_E7764

Features: · High gain low noise RF transistor· Provides outstanding performance for a wide range of wireless applications· Ideal for CDMA and WLAN applications· Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz· Maximum stable gain Gms = 21.5 dB at 1.8 GHz...

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BFP620_E7764: Features: · High gain low noise RF transistor· Provides outstanding performance for a wide range of wireless applications· Ideal for CDMA and WLAN applications· Outstanding noise figure F = 0.7 dB a...

BFP620_E7764 Data Sheet

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Part Number:
BFP620_E7764
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

· High gain low noise RF transistor
· Provides outstanding performance for a wide range of wireless applications
· Ideal for CDMA and WLAN applications
· Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
· Maximum stable gain
   Gms = 21.5 dB at 1.8 GHz
   Gma = 11 dB at 6 GHz
· Gold metallization for extra high reliability


Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
2.3
V
Collector-emitter voltage
VCES
7.5
Collector-base voltage
VCBO
7.5
Emitter-base voltage
VEBO
1.2
Collector current
IC
80
mA
Base current
IB
3
Total power dissipation1)
TS 95°C
Ptot
185
W
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point2)
RthJS
300
K/W


1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance




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