Features: • High gain low noise RF transistor• Provides outstanding performance for a wide range of wireless applications• Ideal for CDMA and WLAN applications• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz• Maximum stable...
BFP620: Features: • High gain low noise RF transistor• Provides outstanding performance for a wide range of wireless applications• Ideal for CDMA and WLAN applications• Outstanding n...
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Features: · High gain low noise RF transistor· Provides outstanding performance for a wide range o...
• High gain low noise RF transistor
• Provides outstanding performance for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
• Gold metallization for extra high reliability
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage TA > 0 °C TA 0 °Ce |
VCEO |
2.3 2.1 |
V |
Collector-emitter voltage |
VCES |
7.5 | |
Collector-base voltage |
VCBO |
7.5 | |
Emitter-base voltage |
VEBO |
1.2 | |
Collector current |
IC |
80 |
mA |
Base current |
IB |
3 | |
Total power dissipation1) |
Ptot |
185 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 |