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SeekIC No. : 003435088 Detail

BFP640FE6327: TRANSISTOR NPN RF 4V TSFP-4

BFP640FE6327 Data Sheet

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Part Number:: BFP640FE6327
Mfg:
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/6/10

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Features: · Small feedback capacitance· Low noise figure· High transition frequencyApplicationLow ...
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Features: · Small feedback capacitance· Low noise figure· High transition frequencyApplicationLow ...
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Product Details

Quick Details

Series:	-	Manufacturer:	Infineon Technologies
Transistor Type:	NPN	Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	40GHz	Noise Figure (dB Typ @ f):	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain:	23dB	Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 30mA, 3V	Current - Collector (Ic) (Max):	50mA
Power Dissipation :	640 mW	Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads	Supplier Device Package:	4-TSFP

Description

Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Current - Collector (Ic) (Max): 50mA
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 4.5V
Manufacturer: Infineon Technologies
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 23dB
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

Parameters:

Technical/Catalog Information	BFP640FE6327
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Frequency - Transition	40GHz
Noise Figure (dB Typ @ f)	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	110 @ 30mA, 3V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4V
Gain	23dB
Power - Max	200mW
Compression Point (P1dB)	13.5dBm
Package / Case	4-TSFP
Packaging	Digi-Reel?
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BFP640FE6327 BFP640FE6327 BFP640FE6327INDKR ND BFP640FE6327INDKRND BFP640FE6327INDKR

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BFP640FE6327

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