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BFP640F

Features: • High gain low noise RF transistor• Provides outstanding performance for a wide range of wireless applications• Ideal for CDMA and WLAN applications• Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz• High maximum ...

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BFP640F: Features: • High gain low noise RF transistor• Provides outstanding performance for a wide range of wireless applications• Ideal for CDMA and WLAN applications• Outstanding n...

BFP640F Data Sheet

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Part Number:
BFP640F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

• High gain low noise RF transistor
• Provides outstanding performance for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
   Gms = 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology




Specifications

Parameter
Symbol
Value
Unit
Collector-emitter voltage
TA > 0 °C
VCEO
4
V
TA 0 °C
3.7
Collector-emitter voltage
VCES
13
Collector-base voltage
VCBO
13
Emitter-base voltage
VEBO
1.2
Collector current
IC
50
mA
Base current
IB
3
Total power dissipation1)
TS 92°C
Ptot
200
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150


1TS is measured on the collector lead at the soldering point to the pcb




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