Features: • High gain low noise RF transistor• Small package 1.4 x 0.8 x 0.59 mm• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz• Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz• Gold metallization for extra...
BFP620F E7764: Features: • High gain low noise RF transistor• Small package 1.4 x 0.8 x 0.59 mm• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz•...
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Features: · High gain low noise RF transistor· Provides outstanding performance for a wide range o...
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
Gms = 21 dB at 1.8 GHz
Gma = 10 dB at 6 GHz
• Gold metallization for extra high reliability
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
2.3 |
V |
Collector-emitter voltage |
VCES |
7.5 | |
Collector-base voltage |
VCBO |
7.5 | |
Emitter-base voltage |
VEBO |
1.2 | |
Collector current |
IC |
80 |
mA |
Base current |
IB |
3 | |
Total power dissipation1) TS 96°C |
Ptot |
185 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter | Symbol | Value | Unit |
Junction - soldering point2) | RthJS | 290 | K/W |
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance