DescriptionThe BDP952E6327 is one of the BDP952 series.The BDP952E6327 is a PNP Silicon AF Power Transistor.Features of the BDP952E6327 are:(1)For AF drivers and output stages;(2)High collector current;(3)High current gain;(4)Low collector-emitter saturation voltage;(5)Complementary type: BDP951.....
BDP952E6327: DescriptionThe BDP952E6327 is one of the BDP952 series.The BDP952E6327 is a PNP Silicon AF Power Transistor.Features of the BDP952E6327 are:(1)For AF drivers and output stages;(2)High collector curr...
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Description The BDP947E6327 is one of the BDP947 series.This is a NPN Silicon AF Power Transistor...
The BDP952E6327 is one of the BDP952 series.The BDP952E6327 is a PNP Silicon AF Power Transistor.
Features of the BDP952E6327 are:(1)For AF drivers and output stages;(2)High collector current;(3)High current gain;(4)Low collector-emitter saturation voltage;(5)Complementary type: BDP951...BDP955 (NPN).
The absolute maximum ratings of the BDP952E6327 can be summarized as:(1)Collector-emitter voltage:80V;(2)Collector-base voltage:100V;(3)Emitter-base voltage:5V;(4)DC collector current:3 A;(5)Peak collector current:5A;(6)Base current:200 mA;(7)Peak base current:500mA;(8)Junction temperature:150 °C;(9)Storage temperature:- 65 ... + 150°C.