BDP947E6327

The BDP947E6327 is one of the BDP947 series.This is a NPN Silicon AF Power Transistors.

Features of the BDP947E6327 are:(1)For AF drivers and output stages;(2)High collector current;(3)High current gain;(4)Low collector-emitter saturation voltage;(5)Complementary type: BDP948, BDP950 (PNP).

The absolute maximum ratings of the BDP947E6327 can be summarized as:(1)Collector-emitter voltage:45V;(2)Collector-base voltage:45V;(3)Emitter-base voltage:5V;(4)DC collector current:3 A;(5)Peak collector current:5A;(6)Base current:200 mA;(7)Peak base current:500mA;(8)Total power dissipation, TS = 99°C:3 W;(9)Junction temperature:150 °C;(10)Storage temperature:- 65 ... + 150°C.