Specifications Parameter Symbol BDP 947 BDP 949 Unit Collector-emitter voltage VCEO 45 60 V Collector-base voltage VCBO 45 60 Emitter-base voltage VEBO 5 5 DC collector current IC 3 A Peak collector current ICM 5 A Base current IB 200 mA Peak base c...
BDP947: Specifications Parameter Symbol BDP 947 BDP 949 Unit Collector-emitter voltage VCEO 45 60 V Collector-base voltage VCBO 45 60 Emitter-base voltage VEBO 5 5 DC collecto...
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Description The BDP947E6327 is one of the BDP947 series.This is a NPN Silicon AF Power Transistor...
DescriptionThe BDP948E6327 is one of the BDP948 series.Features of the BDP948E6327 are:(1)For AF d...
Parameter | Symbol | BDP 947 | BDP 949 | Unit |
Collector-emitter voltage | VCEO | 45 | 60 | V |
Collector-base voltage | VCBO | 45 | 60 | |
Emitter-base voltage | VEBO | 5 | 5 | |
DC collector current | IC | 3 | A | |
Peak collector current | ICM | 5 | A | |
Base current | IB | 200 | mA | |
Peak base current | IBM | 500 | ||
Total power dissipation, TS = 99 °C |
Ptot | 3 | W | |
Junction temperature | Tj | 150 | °C | |
Storage temperature | Tstg | -65 ... 150 |