Specifications Parameter Symbol BDP951 BDP953 BDP955 Unit Collector-emitter voltage VCEO 80 100 120 V Collector-base voltage VCBO 100 120 140 Emitter-base voltage VEBO 5 5 5 DC collector current IC 3 A Peak collector current ICM 5 A Base current IB ...
BDP951: Specifications Parameter Symbol BDP951 BDP953 BDP955 Unit Collector-emitter voltage VCEO 80 100 120 V Collector-base voltage VCBO 100 120 140 Emitter-base voltage VEBO ...
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Description The BDP947E6327 is one of the BDP947 series.This is a NPN Silicon AF Power Transistor...
Parameter | Symbol | BDP951 | BDP953 | BDP955 | Unit |
Collector-emitter voltage | VCEO | 80 | 100 | 120 | V |
Collector-base voltage | VCBO | 100 | 120 | 140 | |
Emitter-base voltage | VEBO | 5 | 5 | 5 | |
DC collector current | IC | 3 | A | ||
Peak collector current | ICM | 5 | A | ||
Base current | IB | 200 | mA | ||
Peak base current | IBM | 500 | |||
Total power dissipation, TS = 99 °C |
Ptot | 3 | W | ||
Junction temperature | Tj | 150 | °C | ||
Storage temperature | Tstg | -65 ... 150 |