Am42BDS640AG

Storage Temperature Plastic Packages . . . . . . . . . . . . . . . 65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . 65°C to +125°C
Voltage with Respect to Ground:
All Inputs and I/Os except as noted below (Note 1) . . . . . . . 0.5 V to VIO + 0.5 V
VCCf/VCCs (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . 0.5 V to +2.5 V
VIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  0.5 V to +1.95 V
ACC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . 0.5 V to +12.5 V
Output Short Circuit Current (Note 3) . . . . . .  . . . . . . . . . . . . .  100 mA
Notes:
1. Minimum DC voltage on input or I/Os is 0.5 V. During voltage transitions, inputs or I/Os may undershoot V_SS to
2.0 V for periods of up to 20 ns during voltage transitions inputs might overshoot to V_CC +0.5 V for periods up to 20
ns. See Figure 6. Maximum DC voltage on input or I/Os is V_CC + 0.5 V. During voltage transitions outputs may
overshoot to V_CC + 2.0 V for periods up to 20 ns. See Figure 7.

2. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater
than one second.

3. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated
in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability. 

The Am42BDS640AG is a 64 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 4,194,304 words of 16 bits each. This device uses a single V_CC of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VID may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.

At 54 MHz, the device provides a burst access of 13.5 ns at 30 pF with a latency of 87.5 ns at 30 pF. At 40 MHz, the device provides a burst access of 20 ns at 30 pF with a latency of 95 ns at 30 pF. The device operates within the industrial temperature range of -40°C to +85°C. Am42BDS640AG is offered in a 93-ball FBGA package.

The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into four
banks. Am42BDS640AG can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank, with zero latency. This releases the system from waiting for the completion of program or erase operations.