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AM42-0040

Features: · High Linear Gain: 30 dB Typ.· High Saturated Output Power: +33 dBm Typ.· High Power Added Efficiency: 26% Typ.· 50W Input/Output Broadband Matched· High Performance Ceramic Bolt Down PackageSpecificationsParameter Absolute MaximumInput Power +23 dBmVDD +12 VoltsVGG-3 VoltsVDD- VGG 12 V...

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SeekIC No. : 004283637 Detail

AM42-0040: Features: · High Linear Gain: 30 dB Typ.· High Saturated Output Power: +33 dBm Typ.· High Power Added Efficiency: 26% Typ.· 50W Input/Output Broadband Matched· High Performance Ceramic Bolt Down Pac...

AM42-0040 Data Sheet

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Part Number:
AM42-0040
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·  High Linear Gain: 30 dB Typ.
·  High Saturated Output Power: +33 dBm Typ.
·  High Power Added Efficiency: 26% Typ.
·  50W Input/Output Broadband Matched
·  High Performance Ceramic Bolt Down Package


Specifications

Parameter                              Absolute Maximum
Input Power                                  +23 dBm
VDD                                               +12 Volts
VGG                                                 -3 Volts
VDD - VGG                                       12 Volts
IDD                                                1700 mA
Channel Temperature                 -40°C to +85°C
Storage Temperature                  -65°C to +150°C
1. Exceeding any one or a combination of these limits may cause permanent damage.
2. Case Temperature (TC) = +25°C.
3. Nominal bias is obtained by first connecting -2.4 volts to pin 5 (VGG), followed by connecting +9 volts to pin 10 (VDD). Note sequence. Adjust VGG for a drain current of 1050 mA typical.
4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.
5. No dc supply voltage will appear at the RF ports.
6. The dc resistance at the input and output ports is a short circuit. No voltage is allowed on these ports.
7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of the VDD leads.


Description

M/A-COM's AM42-0040 is a three-stage MMIC power amplifier in a ceramic bolt down style hermetic package. The AM42-0040 employs an internally matched monolithic chip with internally decoupled Gate and Drain bias networks. The AM42-0040 is designed to be operated from a constant current Drain supply. By varying the Gate bias voltage, the saturated output power performance of this device can be tailored for various applications.

The AM42-0040 is designed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This
amplifier employs a fully monolithic chip and requires a minimum of external components.

M/A-COM's AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full chip
passivation for increased performance and reliability. These amplifiers are 100% RF tested to ensure compliance to
performance specifications.




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