AM42-0007

Features: • High Linear Gain: 22 dB Typ.• High Saturated Output Power: +33 dBm Typ.• High Power Added Efficiency: 22% Typ.• High P1dB: 32 dBm Typ.• 50Ω=Input/Output Broadband Matched• Integrated Output Power Detector• High Performance Ceramic Bolt Do...

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AM42-0007 Picture
SeekIC No. : 004283635 Detail

AM42-0007: Features: • High Linear Gain: 22 dB Typ.• High Saturated Output Power: +33 dBm Typ.• High Power Added Efficiency: 22% Typ.• High P1dB: 32 dBm Typ.• 50Ω=Input/Outp...

floor Price/Ceiling Price

Part Number:
AM42-0007
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• High Linear Gain: 22 dB Typ.
• High Saturated Output Power: +33 dBm Typ.
• High Power Added Efficiency: 22% Typ.
• High P1dB: 32 dBm Typ.
• 50Ω=Input/Output Broadband Matched
• Integrated Output Power Detector
• High Performance Ceramic Bolt Down Package



Specifications

Parameter                                    Absolute Maximum
VDD                                                   12 Volts
VGG                                                  -10 Volts
Power Dissipation                               13.2 W
RF Input Power                                 +23 dBm
Channel Temperature                        150°C
Storage Temperature                   -65°C to +150°C
Ids                                                     2100 mA
1. Operation of this device outside any of these limits may cause permanent damage.
2. Case Temperature (TC) = +25°C.
3. Nominal bias is obtained by first connecting -5 volts to pin 4 (VGG), followed by connection +9 volts to pin 6 (VDD). Note sequence.
4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required.
5. No dc bias voltage appears at the RF ports.
6. The dc resistance at the input port is an open circuit and at the ouput port is a short circuit.
7. For optimum IP3 performance, the VDD bypass capacitors should be placed within 0.5 inches of pin 6.



Description

M/A-COM's AM42-0007 is a three-stage MMIC linear power amplifier in a ceramic bolt down style hermetic package. The AM42-0007 employs a fully matched chip with internally decoupled Gate and Drain bias networks and an ouput power detector. The AM42-0007 is designed to be operated from a constant voltage Drain supply.

The AM42-0007 is designed for use as an output stage or a driver, in applications for VSAT systems. This design is fully monolithic and requires a minimum of external components.

M/A-COM's AM42-0007 is fabricated using a mature 0.5 micron GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.


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