Transistors RF GaAs Transistor GaAs High Linearity
ATF-531P8-TR2: Transistors RF GaAs Transistor GaAs High Linearity
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Technology Type : | EpHEMT | Frequency : | 2 GHz | ||
Gain : | 20 dB | Noise Figure : | 0.6 dB | ||
Forward Transconductance gFS (Max / Min) : | 650 mmho | Drain Source Voltage VDS : | 7 V | ||
Gate-Source Breakdown Voltage : | - 5 V to 1 V | Continuous Drain Current : | 300 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 1 W | ||
Mounting Style : | SMD/SMT | Package / Case : | LPCC-8 |
Technical/Catalog Information | ATF-531P8-TR2 |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Transistor Type | pHEMT FET |
Voltage - Rated | 38V |
Current Rating | 135mA |
Package / Case | 8-LPCC |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ATF 531P8 TR2 ATF531P8TR2 |