ATF-53189

Features:

* Single voltage operation
* High Linearity and Gain
* Low Noise Figure
* Excellent uniformity in product specifications
* SOT 89 standard package
* Point MTTF > 300 years
* MSL-1 and lead-free
* Tape-and-Reel packaging option available




Application

* Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure
* Driver Amplifier for WLAN, WLL/RLL and MMDS applications
* General purpose discrete E-pHEMT for other high linearity applications




Pinout






Specifications

Symbol	Parameter	Units	Absolute Maximum
Vds	DrainSource Voltage[2]	V	7
Vgs	GateSource Voltage[2]	V	-5 to 1.0
Vgd	Gate Drain Voltage [2]	V	-5 to 1.0
Ids	Drain Current[2]	mA	300
Igs	Gate Current	mA	20
Pdiss	Total Power Dissipation[3]	W	1.0
Pin max.	RF Input Power	dBm	+24
Tch	Channel Temperature	°C	150
Tstg	Storage Temperature	°C	-65 to 150

Description

The ATF-53189 is a single-voltage high linearity, low noise E-pHEMT housed in a SOT-89 package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range.

Agilent Technologies's ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz.

ATF-53189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested.