Transistors RF GaAs Transistor GaAs High Linearity
ATF-53189-BLK: Transistors RF GaAs Transistor GaAs High Linearity
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Technology Type : | EpHEMT | Frequency : | 2 GHz | ||
Gain : | 15.5 dB | Noise Figure : | 0.85 dB | ||
Forward Transconductance gFS (Max / Min) : | 650 mmho | Drain Source Voltage VDS : | 7 V | ||
Gate-Source Breakdown Voltage : | - 5 V to 1 V | Continuous Drain Current : | 300 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 1 W | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
Technical/Catalog Information | ATF-53189-BLK |
Vendor | Avago Technologies US Inc. |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | SOT-89 |
FET Type | N-Channel |
Typical RF Application | MMDS |
Typical RF Application | WLL |
Drain to Source Voltage (Vdss) | 7.0 V [Nom] |
Voltage Gate to Source (Vgs) | 5.0 V [Max] |
Drain Gate Voltage (Vdg) | 5.0 [Nom] |
Continuous Drain Current (Id) | 300.00 mA [Nom] |
Forward Gate Current (Igf) | 20.0 [Nom] |
Power Dissipation | 1.000 W [Max] |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ATF 53189 BLK ATF53189BLK |