ATF-44101

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{CASE TEMPERATURE} = 25°C.
3. Derate at 43 mW/°C for TCASE > 25°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.

The ATF-44101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally .5Êmicron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between source fingers. Total gate periphery is 5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

This device ATF-44101 is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistance.