Position: Home  > All Categories> Integrated Circuits (ICs) > ATF-36163

ATF-36163

Features: • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz• Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz• Maximum Available Gain: 11 dB Typical at 12 GHz 17 dB Typical at 4 GHz• Low Cost Surface Mount Small Plastic PackageR...

product image

ATF-36163 Picture
See larger image
SeekIC No. : 004291241 Detail

ATF-36163: Features: • Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz• Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz• Maximum Available Gain: 11...

ATF-36163 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
ATF-36163
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/3/13

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Low Minimum Noise Figure: 1 dB Typical at 12 GHz 0.6 dB Typical at 4 GHz
• Associated Gain: 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz
• Maximum Available Gain: 11 dB Typical at 12 GHz 17 dB Typical at 4 GHz
• Low Cost Surface Mount Small Plastic Package
• Tape-and-Reel Packaging Option Available




Application

• 12 GHz DBS Downconverters
• 4 GHz TVRO Downconverters
• S or L Band Low Noise Amplifiers




Pinout

Connection Diagram




Specifications

Symbol Parameter Units Absolute
Maximum[1]
VDS Drain Source Voltage V +3
VGS Gate Source Voltage V -3
VGD Gate-Drain Voltage V -3.5
ID Drain Current mA IDSS
PT Power Dissipation [2,3] mW 180
Pin max RF Input Power dBm +10
TCH Channel Temperature °C 150
TSTG Storage Temperature[4] °C -65 to 150
Note:
1. Operation of this device above any one of these parameters may cause permanent damage.




Description

The Hewlett-Packard ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12 GHz and 0.6ÊdB at 4 GHz.

Additionally, the ATF-36163 has low noise-resistance, which reduces the sensitivity of noise performance to variations in input impedance match. This feature makes the design of broad band low noise amplifiers much easier. The performance of the ATF-36163 makes this device the ideal choice for use in the 2nd or 3rd stage of low noise cascades. The repeatable performance and consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) TV systems, C-band TV Receive Only (TVRO) LNAs, Multichannel Multipoint Distribution Systems (MMDS), X-band Radar detector and other low noise amplifiers operating in the 1.5 18 GHz frequency range.

This GaAs PHEMT device ATF-36163 has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization system and nitride passivation assure rugged, reliable devices.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Isolators
HCPL062N
HCPL316J
Prototyping Products
AVT4168
DE1
Switches
US32DMRJ
HBGQ22P-11ET
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Tools
TCP202
G084SN05 V.3
View more