Transistors RF GaAs Transistor GaAs High Frequency
ATF-36163-TR1G: Transistors RF GaAs Transistor GaAs High Frequency
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Technology Type : | pHEMT | Frequency : | 12 GHz | ||
Gain : | 10 dB | Noise Figure : | 12 dB | ||
Forward Transconductance gFS (Max / Min) : | 60 mS | Drain Source Voltage VDS : | 3 V | ||
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 40 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 180 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Technical/Catalog Information | ATF-36163-TR1G |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Transistor Type | pHEMT FET |
Voltage - Rated | 3V |
Current Rating | 40mA |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ATF 36163 TR1G ATF36163TR1G |