Transistors RF GaAs Transistor GaAs High Frequency
ATF-36077-TR1: Transistors RF GaAs Transistor GaAs High Frequency
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Technology Type : | pHEMT | Frequency : | 12 GHz | ||
Gain : | 12 dB | Noise Figure : | 0.5 dB | ||
Forward Transconductance gFS (Max / Min) : | 55 mS | Drain Source Voltage VDS : | 3 V | ||
Gate-Source Breakdown Voltage : | - 3 V | Continuous Drain Current : | 45 mA | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 180 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | Case 77 |
Technical/Catalog Information | ATF-36077-TR1 |
Vendor | Avago Technologies US Inc. |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | 77-SMD |
FET Type | N-Channel |
Typical RF Application | ISM |
Typical RF Application | DBS |
Typical RF Application | TVRO |
Drain to Source Voltage (Vdss) | 3.0 V [Nom] |
Voltage Gate to Source (Vgs) | 3.0 V [Max] |
Drain Gate Voltage (Vdg) | 3.5 [Nom] |
Continuous Drain Current (Id) | 45.00 mA [Nom] |
Power Dissipation | 180.000 mW [Max] |
Packaging | Tape & Reel, 7" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ATF 36077 TR1 ATF36077TR1 |