Transistors RF GaAs Transistor GaAs Low Noise
ATF-331M4-TR1: Transistors RF GaAs Transistor GaAs Low Noise
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Technology Type : | pHEMT | Frequency : | 2 GHz | ||
Gain : | 15 dB | Noise Figure : | 0.6 dB | ||
Forward Transconductance gFS (Max / Min) : | 440 mmho | Drain Source Voltage VDS : | 5.5 V | ||
Gate-Source Breakdown Voltage : | - 5 V | Continuous Drain Current : | 305 mA | ||
Maximum Operating Temperature : | + 160 C | Power Dissipation : | 400 mW | ||
Mounting Style : | SMD/SMT | Package / Case : | Mini PAK |
Technical/Catalog Information | ATF-331M4-TR1 |
Vendor | Avago Technologies US Inc. |
Category | Discrete Semiconductor Products |
Transistor Type | pHEMT FET |
Voltage - Rated | 5.5V |
Current Rating | 305mA |
Package / Case | MiniPak |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | ATF 331M4 TR1 ATF331M4TR1 |