Features: * High Output Power: 18.0dBm Typical P1 dB at 12GHz* High Gain:9.0 dB Typical GSS at 12GHz* Low Cost Plastic Package* Tape-and-Reel Packaging Option Available[1]Specifications Symbol Parameter Units Absolute Maximum VDS Drain-Source Voltage V +7 VGS Gate-Source Volta...
ATF-26884-TR1: Features: * High Output Power: 18.0dBm Typical P1 dB at 12GHz* High Gain:9.0 dB Typical GSS at 12GHz* Low Cost Plastic Package* Tape-and-Reel Packaging Option Available[1]Specifications Symbol ...
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Symbol | Parameter | Units | Absolute Maximum |
VDS | Drain-Source Voltage | V | +7 |
VGS | Gate-Source Voltage | V | -4 |
VGD | Gate-Drain Voltage | V | -8 |
IDS | Drain Current | mA | IDSS |
PT | Power Dissipation[2,3] | mW | 275 |
TCH | Channel Temperature | °C | 175 |
TSTG | Storage Temperature | °C | -65 to +150 |
The ATF-26884-TR1 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 GHz frequency range.
This GaAs FET device ATF-26884-TR1 has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.