ATF-26884-TR1

Features: * High Output Power: 18.0dBm Typical P1 dB at 12GHz* High Gain:9.0 dB Typical GSS at 12GHz* Low Cost Plastic Package* Tape-and-Reel Packaging Option Available[1]Specifications Symbol Parameter Units Absolute Maximum VDS Drain-Source Voltage V +7 VGS Gate-Source Volta...

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ATF-26884-TR1 Picture
SeekIC No. : 004291232 Detail

ATF-26884-TR1: Features: * High Output Power: 18.0dBm Typical P1 dB at 12GHz* High Gain:9.0 dB Typical GSS at 12GHz* Low Cost Plastic Package* Tape-and-Reel Packaging Option Available[1]Specifications Symbol ...

floor Price/Ceiling Price

Part Number:
ATF-26884-TR1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

* High Output Power: 18.0dBm Typical P1 dB at 12GHz
* High Gain:9.0 dB Typical GSS at 12GHz
* Low Cost Plastic Package
* Tape-and-Reel Packaging Option Available[1]



Specifications

Symbol Parameter Units Absolute Maximum
VDS Drain-Source Voltage V +7
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -8
IDS Drain Current mA IDSS
PT Power Dissipation[2,3] mW 275
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +150



Description

The ATF-26884-TR1 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16 GHz frequency range.

This GaAs FET device ATF-26884-TR1 has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.

 




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