ATF-25170

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_{MOUNTING SURFACE} = 25°C.
3. Derate at 3.3 mW/°C for T_{MOUNTING SURFACE} >40°C.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information.

The ATF-25170 is a high performance gallium arsenide Schottkybarrier- gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range.

This GaAs FET device ATF-25170 has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.