ATF-13786

Notes:
1. Operation of this device above any one of these conditions may cause permanent damage.
2. T_CASE = 25 (TCASE is defined to be the temperature at the ends of pins 2 and 4 where they contact the circuit
board).
3. Derate at 3.1 mW/oC for T_C >60.

Hewlett-Packard's ATF-13786 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This device is designed for use in low cost, surface mount oscillators operating over the RF and microwave frequency ranges. The ATF-13786 has sufficient gain for easy use as a negative R cell, without excess gain that can lead to unwanted oscillations and mode jumping. The gate structure used in the fabrication of this device results in phase noise performance superior to that of most other MESFETs. These features make this device particularly well suited for low power (< +10 dBm) commercial oscillator applications such as are encountered in DBS, TVRO, and MMDS television receivers, or hand-held transceivers operating in the 900 MHz, 2.4 GHz, and 5.7ÊGHz ISM bands.

This GaAs FET device ATF-13786 has a nominal 0.3 micron gate length with a total gate periphery of 250Êmicrons. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.