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ATF-13336

Features: * Low Noise Figure:1.4 dB Typical at 12? GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dBm Typical P1 dB at 12?GHz* Cost Effective Ceramic Microstrip Package* Tape-and-Reel Packaging option Available[1]Specifications Symbol Parameter Units Absolute M...

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SeekIC No. : 004291169 Detail

ATF-13336: Features: * Low Noise Figure:1.4 dB Typical at 12? GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dBm Typical P1 dB at 12?GHz* Cost Effective Ceramic Microstrip Package* ...

ATF-13336 Data Sheet

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Part Number:
ATF-13336
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

* Low Noise Figure:1.4 dB Typical at 12? GHz
* High Associated Gain:9.0 dB Typical at 12 GHz
* High Output Power:17.5 dBm Typical P1 dB  at 12?GHz
* Cost Effective Ceramic Microstrip Package
* Tape-and-Reel Packaging option Available[1]


Specifications

Symbol Parameter Units Absolute Maximum
VDS Drain-Source Voltage V +5
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -6
IDS Drain Current mA IDSS
PT Power Dissipation [2,3] mW 225
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +175



Description

The ATF-13336 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its premium noise  figure makes this device appropriate for use in low noise amplifiers operating in the 2-16 GHzfrequency range.

This GaAs FET device ATF-13336 has a nominal 0.3 micron gate length with a total gate periphery of 250 microns.  Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.




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