ATF-13170

ATF-13170 is a kind of high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a hermetic and high reliability package.Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 2-16 GHz frequency range.There are some features as follows.First is low noise figure:1.0 dB typical at 12 GHz.Then is high associated gain:10.0 dB typical at 12 GHz.Next is high output power:17.5 dBm typical P1 dB at 12 GHz.The last one is hermetic gold-ceramic microstrip package.

What comes next is about the ATF-13170 absolute maximum ratings.The V_DS (drain-source voltage) is +5 V.The V_GS (gate-source voltage) is -4 V.The I_DS (drain current) is I_DSS.The P_T (power dissipation) is 225 mW.The T_CH (channel temperature) is 175.The T_STG (storage temperature) is from -65 to +175.

The following is about the ATF-13170 electrical specifications (T_A=25).The typical NF_O (optimum noise figure) is 0.8 dB at V_DS=2.5 V,I_DS=20 mA,f=8.0 GHz;The typical NF_O (optimum noise figure) is 1.0 dB and the maximum is 1.1 dB at V_DS=2.5 V,I_DS=20 mA,f=12.0 GHz;The typical NF_O (optimum noise figure) is 1.3 dB at V_DS=2.5 V,I_DS=20 mA,f=14.0 GHz.The typical G_A (gain @ NF_O) is 12.0 dB at V_DS=2.5 V,I_DS=20 mA,f=8.0 GHz;The minimum G_A (gain @ NF_O) is 9.0 dB and the typical is 10.0 dB at V_DS=2.5 V,I_DS=20 mA,f=12.0 GHz;The typical G_A (gain @ NF_O) is 8.5 dB at V_DS=2.5 V,I_DS=20 mA,f=14.0 GHz.The typical P_{1 dB} (output power @ 1 dB gain compression) is 17.5 dBm at V_DS=4 V,I_DS=40 mA,f=12.0 GHz.The typical G_{1 dB} (1 dB gain compression) is 8.5 dB at V_DS=4 V,I_DS=40 mA,f=12.0 GHz.The minimum gm (transconductance) is 30 mmho and the typical is 55 mmho at V_DS=2.5 V,V_GS=0 V.The minimum I_DSS (saturated drain current) is 40 mA,the typical is 50 mA and the maximum is 90 mA at V_DS=2 V,V_GS=0 V.The minimum V_P (pinoff voltage) is -3.0 V,the typical is -1.5 V and the maximum is -0.8 V at V_DS=2.5 V,I_DS=1 mA.