Features: ·Low series resistance ·Low capacitance · Hermetic Glass Package Specifications IF 100 mA VR 35 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C JC 0.6 °C /mW DescriptionThe ASI 5082-3188 is a Switching Diode Designed for low pow...
ASI5082-3188: Features: ·Low series resistance ·Low capacitance · Hermetic Glass Package Specifications IF 100 mA VR 35 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C t...
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Features: • Gold contact metalization• Passivated ChipSpecifications I 100 mA ...
Features: • Transition Time 95 pS• Hermetic Glass PackageSpecifications IF 50 mA...
Features: • Transition Time 250 pS Typical• Hermetic Glass PackageSpecifications ...
IF | 100 mA |
VR | 35 V |
PDISS | 250 mW @ TC = 25 °C |
TJ | -65 °C to +200 °C |
TSTG | -65 °C to +150 °C |
JC |
0.6 °C /mW |