Features: • Gold contact metalization• Passivated ChipSpecifications I 100 mA V 15 V PDISS 100 mW @ TC = 25 °C TJ -60 °C to +200 °C TSTG -60 °C to +200 °C TSOLD t 1.0 MINUTE +310 °CDescriptionThe ASI 5082-0008 is a Silicon Oxide Passivated SRD Chip Designed fo...
ASI5082-0008: Features: • Gold contact metalization• Passivated ChipSpecifications I 100 mA V 15 V PDISS 100 mW @ TC = 25 °C TJ -60 °C to +200 °C TSTG -60 °C to +200 °C TSOLD ...
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Features: • Transition Time 95 pS• Hermetic Glass PackageSpecifications IF 50 mA...
Features: • Transition Time 250 pS Typical• Hermetic Glass PackageSpecifications ...
Features: ·Direct Replacement for HP 5082-3170· Isolation = 20 dB min. at 10 GHz·Hermetic PackageS...
I | 100 mA |
V | 15 V |
PDISS | 100 mW @ TC = 25 °C |
TJ | -60 °C to +200 °C |
TSTG | -60 °C to +200 °C |
TSOLD | t <1.0 MINUTE +310 °C |
The ASI 5082-0008 is a Silicon Oxide Passivated SRD Chip Designed for hybrid local oscillator Applications.