Features: • Transition Time 95 pS• Hermetic Glass PackageSpecifications IF 50 mA VR 25 V PDISS 290 mW @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C JC 0.6 °C/mWDescriptionThe ASI 5082-0153 is a Silicon Step Recovery Diode Designed for Synthesiser and Samp...
ASI5082-0153: Features: • Transition Time 95 pS• Hermetic Glass PackageSpecifications IF 50 mA VR 25 V PDISS 290 mW @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +200 °C JC 0.6 ...
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Features: • Gold contact metalization• Passivated ChipSpecifications I 100 mA ...
Features: • Transition Time 250 pS Typical• Hermetic Glass PackageSpecifications ...
Features: ·Direct Replacement for HP 5082-3170· Isolation = 20 dB min. at 10 GHz·Hermetic PackageS...
IF | 50 mA |
VR | 25 V |
PDISS | 290 mW @ TC = 25 °C |
TJ | -65 to +200 °C |
TSTG | -65 to +200 °C |
JC | 0.6 °C/mW |
The ASI 5082-0153 is a Silicon Step Recovery Diode Designed for Synthesiser and Sampler Applications Requiring a High Performance to Cost Ratio.