AS7C4096A

NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The AS7C4096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words * 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address of AS7C4096A access and cycle times (t_AA, t_RC, t_WC) of 10/12/15/20 ns with output enable access times (t_OE) of 5/6 ns are ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems.

When CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode.

A write cycle of AS7C4096A is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1I/O8 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle of AS7C4096A is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode.

All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage. This device is available as per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.