AS7C33515FT18A

The AS7C33512FT18A is a high-performance CMOS 8-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words * 18 bits.The AS7C33512FT18A family operates from a core 3.3V power supply. I/Os use a separate power supply that can operate at 2.5V or 3.3V. These devices are available in 100-pin TQFP.

Features of the AS7C33512FT18A are:(1)Organization: 524,288 words * 18 bits;(2)Fast clock to data access: 7.5/8.5/10ns;(3)Fast OE access time: 3.5/4.0 ns;(4)Fully synchronous flow-through operation;(5)Asynchronous output enable control;(6)Available in 100-pin TQFP package;(7)Individual byte write and global write;(8)Multiple chip enables for easy expansion;(9)3.3V core power supply;(10)2.5V or 3.3V I/O operation with separate V_DDQ;(11)Linear or interleaved burst control;(12)Snooze mode for reduced power-standby;(13)Common data inputs and data outputs.

The absolute maximum ratings of the AS7C33512FT18A can be summarized as:(1)Power supply voltage relative to GND,V_DD, V_DDQ:-0.5V to +4.6V;(2)Input voltage relative to GND (input pins),V_IN:-0.5V to (V_DD+0.5)V;(3)Input voltage relative to GND (I/O pins),V_IN:-0.5V to (V_DDQ+0.5)V;(4)Power dissipation,P_d:1.8W;(5)Short circuit output current,I_OUT:20mA;(6)Storage temperature,T_stg:-65 to +150;(7)Temperature under bias,T_bias:-65 to +135.Stresses greater than those listed under "Absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso- lute maximum rating conditions may affect reliability.

If you want to know more information such as the electrical characteristics about the AS7C33512FT18A, please download the datasheet in www.seekic.com or www.chinaicmart.com .