DescriptionThe AS7C33256NTF32A-10TQCN is one member of the AS7C33256NTF32A series.The AS7C33256NTF32A family is a high performance CMOS 8 Mbit Synchronous Static Random Access Memory (Flowthrough SRAM) organized as 262,144 words * 32 or 36 bits and incorporates a LATE Write. AS7C33256NTF32A-10TQCN...
AS7C33256NTF32A-10TQCN: DescriptionThe AS7C33256NTF32A-10TQCN is one member of the AS7C33256NTF32A series.The AS7C33256NTF32A family is a high performance CMOS 8 Mbit Synchronous Static Random Access Memory (Flowthrough SR...
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Features: `AS7C1024A (5V version)` AS7C31024A (3.3V version)` Industrial and commercial temperatur...
The AS7C33256NTF32A-10TQCN is one member of the AS7C33256NTF32A series.The AS7C33256NTF32A family is a high performance CMOS 8 Mbit Synchronous Static Random Access Memory (Flowthrough SRAM) organized as 262,144 words * 32 or 36 bits and incorporates a LATE Write. AS7C33256NTF32A-10TQCN variation of the 8Mb sychronous SRAM uses the No Turnaround Delay (NTD ) architecture, featuring an enhanced write operation that improves bandwidth over pipelined burst devices. In a normal flowthrough burst device, the write data, command, and address are all applied to the device on the same clock edge. If a read command of AS7C33256NTF32A-10TQCN follows this write command, the system must wait for one 'dead' cycle for valid data to become available. AS7C33256NTF32A-10TQCN dead cycle can significantly reduce overall bandwidth for applications requiring random access or read-modify-write operations.
Features of the AS7C33256NTF32A-10TQCN are:(1)fully synchronous operation; (2)flow-through mode; (3)asynchronous output enable control; (4)available in 100-pin TQFP; (5)byte write enables; (6)clock enable for operation hold; (7)multiple chip enables for easy expansion; (8)3.3 core power supply; (9)2.5V or 3.3V I/O operation with separate VDDQ; (10)30 mW typical standby power; (11)self-timed write cycles; (12)interleaved or linear burst modes; (13)snooze mode for standby operation.
The absolute maximum ratings of the AS7C33256NTF32A-10TQCN can be summarized as:(1)power supply voltage relative to GND:-0.5V to 4.6V;(2)input voltage relative to GND:-0.5V to Vdd+0.5V;(3)storage temperature:-65 to 150;(4)temperature under bias:-65 to 150;(5)power dissipatio:1.8W.Stresses greater than those listed under "Absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer.