AS7C33128PFS36B-200TQI

The AS7C33128PFS36B-200TQI is a high performance CMOS 4-Mbit synchronous static random access memory (SRAM) device organized as 131,072 words x 36 bits and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

The absolute maximum ratings of the AS7C33128PFS36B-200TQI can be summarized as:(1):the parameter is power supply voltage relative to GND,the symbol is VDD, VDDQ,the rating is -0.5 to +4.6,the unit is V;(2):the parameter is input voltage relative to GND (input pins),the symbol is VIN,the rating is -0.5 to VDD+5.0,the unit is V;(3):the parameter is input voltage relative to GND (I/O pins),the symbol is VIN,the rating is 0.5 to VDDQ+0.5,the unit is V;(4):the parameter is power dissipation,the symbol is PD,the rating is 1.8,the unit is W;(5):the parameter is storage temperature,the symbol is Tstg,the rating is -65 to +150,the unit is ;(6):the parameter is short circuit output current,the symbol is IOUT,the rating is 20,the unit is mA;(7):the parameter is temperature under bias,the symbol is Tbias,the rating is -65 to +135,the unit is .