DescriptionThe AS7C33128NTF32B-10TQCN is one member of the AS7C33128NTF32B series.The AS7C33128NTF32B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organized as 131,072 words * 32 or 36 bits and incorporates a LATE Write.This variation of the 4Mb+ synchron...
AS7C33128NTF32B-10TQCN: DescriptionThe AS7C33128NTF32B-10TQCN is one member of the AS7C33128NTF32B series.The AS7C33128NTF32B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organize...
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Features: `AS7C1024A (5V version)` AS7C31024A (3.3V version)` Industrial and commercial temperatur...
The AS7C33128NTF32B-10TQCN is one member of the AS7C33128NTF32B series.The AS7C33128NTF32B family is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) organized as 131,072 words * 32 or 36 bits and incorporates a LATE Write.This variation of the 4Mb+ synchronous SRAM uses the No Turnaround Delay (NTD ) architecture, featuring an enhanced write operation that improves bandwidth over flowthrough burst devices. In a normal flowthrough burst device, the write data,command, and address are all applied to AS7C33128NTF32B-10TQCN on the same clock edge. If a read command follows this write command,the system must wait for one dead cycle for valid data to become available. This dead cycle of AS7C33128NTF32B-10TQCN can significantly reduce overall bandwidth for applications requiring random access or read-modify-write operations.
Features of the AS7C33128NTF32B-10TQCN are:(1)fully synchronous operation; (2)flow-through mode; (3)asynchronous output enable control; (4)available in 100-pin TQFP package; (5)byte write enables; (6)clock enable for operation hold; (7)multiple chip enables for easy expansion; (8)3.3V core power supply; (9)2.5V or 3.3V I/O operation with separate VDDQ; (10)self-timed write cycles; (11)interleaved or linear burst modes; (12)snooze mode for standby operation.
The absolute maximum ratings of the AS7C33128NTF32B-10TQCN can be summarized as:(1)power supply voltage relative to GND:-0.5V to 4.6V;(2)input voltage relative to GND:-0.5V to Vdd+0.5V;(3)storage temperature:-65 to 150;(4)temperature under bias:-65 to 135;(5)power dissipatio:1.8W.Stresses greater than those listed under "Absolute maximum ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reliability.All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible.