DescriptionThe AS7C25512FT36A-85TQC is a high-performance CMOS 16-Mbit synchronous static random access memory (SRAM) device organized as 524,288 words x 32/36.The AS7C25512FT36A-85TQC operates from a core 2.5V power supply. These devices are available in a 100-pin TQFP package.Features of the AS7...
AS7C25512FT36A-85TQC: DescriptionThe AS7C25512FT36A-85TQC is a high-performance CMOS 16-Mbit synchronous static random access memory (SRAM) device organized as 524,288 words x 32/36.The AS7C25512FT36A-85TQC operates from...
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Features: `AS7C1024A (5V version)` AS7C31024A (3.3V version)` Industrial and commercial temperatur...
The AS7C25512FT36A-85TQC is a high-performance CMOS 16-Mbit synchronous static random access memory (SRAM) device organized as 524,288 words x 32/36.The AS7C25512FT36A-85TQC operates from a core 2.5V power supply. These devices are available in a 100-pin TQFP package.
Features of the AS7C25512FT36A-85TQC are:(1)organization: 524,288 words × 32 or 36 bits;(2)fast clock to data access: 7.5/8.5/10.0 ns;(3)fast OE access time: 3.5/4.0 ns;(4)fully synchronous flow-through operation;(5)asynchronous output enable control;(6)available in 100-pin TQFP package;(7)individual byte write and global write;(8)multiple chip enables for easy expansion;(9)2.5V core power supply;(10)linear or interleaved burst control;(11)snooze mode for reduced power-standby;(12)common data inputs and data outputs.
The recommended operating conditions of the AS7C25512FT36A-85TQC can be summarized as:(1):the parameter is supply voltage for inputs,the symbol is VDD,the Min is 2.375,the Nominal is 2.5,the Max is 2.625,the unit is V;(2):the parameter is supply voltage for I/O,the symbol is VDDQ,the Min is 2.375,the Nominal is 2.5,the Max is 2.625,the unit is V;(3):the parameter is ground supply,the symbol is VDD,the Min is 0,the Nominal is 0,the Max is 0,the unit is V.