AS7C164

The AS7C164 is a high performance CMOS 65,536-bit Static Random Access Memory (SRAM) device organized as 8,192 words * 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Features of the AS7C164 are:(1)AS7C164(5V version);(2) Commercial temperature;(3)Organization: 8,192words*8bits;(4)Center power and ground pins;(5)High speed:12/15/20 ns address access time6/7/8 ns output enable access time;(6)Low power consumption: ACTIVE:550 mW (AS7C164)/max @ 12ns;(7)Low power consumption: STANDBY:11 mW(AS7C164)/max CMOS I/O;(8)2.0V data retention;(9)Easy memory expansion with CE1, CE2,OE inputs;(10)TTL-compatible, three-state I/O;(11)28-pin JEDEC standard package:300 mil SOJ;(12)ESD protection2000 volts;(13)Latch-up current200mA.

The absolute maximum ratings of the AS7C164 can be summarized as:(1)Voltage on VCC relative to GND,V_t1:-0.50V to +7.0V;(2)Voltage on any pin relative to GND,V_t2:-0.50V to V_CC+0.50 V;(3)Power dissipation,P_D:1.0W;(4)Storage temperature (plastic),T_stg:-65 to +150;(5)Ambient temperature with V_CC applied,T_blas:-55 to +125;(6)DC current into outputs (low),I_out:20mA.NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional oper- ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

If you want to know more information such as the electrical characteristics about the AS7C164, please download the datasheet in www.seekic.com or www.chinaicmart.com .