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AM81720-012

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* 31.8 W IC Device Current* 1.47 A VCC Collector-Supply Voltage* 24 V TJ Junction Temperature 200 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM81720-012 is designed specifically...

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AM81720-012: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* 31.8 W IC Device Current* 1.47 A VCC Collector-Supply Voltage* 24 V TJ Junction Temperature 200 ...

AM81720-012 Data Sheet

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Part Number:
AM81720-012
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* 31.8 W
IC Device Current* 1.47 A
VCC Collector-Supply Voltage* 24 V
TJ Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM81720-012 is designed specifically for Telecommunications applications.

The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ¥:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system.

The unique AMPAC™ AM81720-012 are housed in Hermetic Metal/Ceramic packages with internal Input/Output matching structures.


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