AM81214-015

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  100°C)	37.5	W
IC	Device Current*	1.8	A
VCC	Collector-Supply Voltage*	32	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

AM81214-015 is supplied in the grounded IMPAC^TM Hermetic Metal/Ceramic package with internal input/output matching structures.