AM81214-060

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC100°C)	107	W
IC	Device Current*	5.0	A
VCC	Collector-Supply Voltage*	32	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed outputand driver applications.

The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 8:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM81214-060 is supplied in the AMPAC^TM Hermetic Metal/Ceramic package with internal Input/Output matching structures.